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Other articles related with "multiple quantum wells"：
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74206 |
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋) |
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Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers |
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Chin. Phys. B
2022 Vol.31 (7): 74206-074206
[Abstract]
(348)
[HTML 1 KB]
[PDF 607 KB]
(68)
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17801 |
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) |
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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer |
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Chin. Phys. B
2022 Vol.31 (1): 17801-017801
[Abstract]
(546)
[HTML 0 KB]
[PDF 547 KB]
(94)
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107803 |
Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武) |
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Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells |
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Chin. Phys. B
2019 Vol.28 (10): 107803-107803
[Abstract]
(698)
[HTML 1 KB]
[PDF 1958 KB]
(116)
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97104 |
Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘) |
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Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction |
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Chin. Phys. B
2018 Vol.27 (9): 97104-097104
[Abstract]
(828)
[HTML 1 KB]
[PDF 666 KB]
(169)
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17302 |
Wei-Min Zheng(郑卫民), Wei-Yan Cong(丛伟艳), Su-Mei Li(李素梅), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北) |
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Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells |
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Chin. Phys. B
2018 Vol.27 (1): 17302-017302
[Abstract]
(580)
[HTML 1 KB]
[PDF 642 KB]
(198)
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17805 |
Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫) |
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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths |
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Chin. Phys. B
2017 Vol.26 (1): 17805-017805
[Abstract]
(577)
[HTML 1 KB]
[PDF 308 KB]
(328)
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127801 |
Liu Wei (刘炜), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Zhu Jian-Jun (朱建军), Li Xiang (李翔), Liang Feng (梁锋), Liu Jian-Ping (刘建平), Yang Hui (杨辉) |
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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode |
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Chin. Phys. B
2015 Vol.24 (12): 127801-127801
[Abstract]
(802)
[HTML 1 KB]
[PDF 1354 KB]
(451)
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116103 |
He Chao (何超), Liu Zhi (刘智), Zhang Xu (张旭), Huang Wen-Qi (黄文奇), Xue Chun-Lai (薛春来), Cheng Bu-Wen (成步文) |
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Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature |
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Chin. Phys. B
2014 Vol.23 (11): 116103-116103
[Abstract]
(739)
[HTML 1 KB]
[PDF 719 KB]
(329)
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106106 |
Huang Cheng-Cheng (黄呈橙), Zhang Xia (张霞), Xu Fu-Jun (许福军), Xu Zheng-Yu (许正昱), Chen Guang (陈广), Yang Zhi-Jian (杨志坚), Tang Ning (唐宁), Wang Xin-Qiang (王新强), Shen Bo (沈波) |
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Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template |
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Chin. Phys. B
2014 Vol.23 (10): 106106-106106
[Abstract]
(552)
[HTML 1 KB]
[PDF 1130 KB]
(490)
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54211 |
Liang Ming-Ming (梁明明), Weng Guo-En (翁国恩), Zhang Jiang-Yong (张江勇), Cai Xiao-Mei (蔡晓梅), Lü Xue-Qin (吕雪芹), Ying Lei-Ying (应磊莹), Zhang Bao-Ping (张保平) |
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Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells |
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Chin. Phys. B
2014 Vol.23 (5): 54211-054211
[Abstract]
(734)
[HTML 1 KB]
[PDF 446 KB]
(611)
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88401 |
Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content |
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Chin. Phys. B
2013 Vol.22 (8): 88401-088401
[Abstract]
(609)
[HTML 1 KB]
[PDF 421 KB]
(675)
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88102 |
Wan Tu-Tu (万图图), Ye Zhan-Qi (叶展圻), Tao Tao (陶涛), Xie Zi-Li (谢自力), Zhang Rong (张荣), Liu Bin (刘斌), Xiu Xiang-Qian (修向前), Li Yi (李毅), Han Ping (韩平), Shi Yi (施毅), Zheng You-Dou (郑有炓) |
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The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays |
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Chin. Phys. B
2013 Vol.22 (8): 88102-088102
[Abstract]
(763)
[HTML 1 KB]
[PDF 521 KB]
(719)
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27805 |
Mu Xue (穆雪), Wu Xiao-Ming (吴晓明), Hua Yu-Lin (华玉林), Jiao Zhi-Qiang (焦志强), Shen Li-Ying (申利莹), Su Yue-Ju (苏跃举), Bai Juan-Juan (白娟娟), Bi Wen-Tao (毕文涛), Yin Shou-Gen (印寿根), Zheng Jia-Jin (郑加金 ) |
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Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer |
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Chin. Phys. B
2013 Vol.22 (2): 27805-027805
[Abstract]
(862)
[HTML 1 KB]
[PDF 276 KB]
(3951)
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17805 |
Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文), Xue Chun-Lai(薛春来), Zhang Guang-Ze(张广泽), Su Shao-Jian(苏少坚), Zuo Yu-Hua(左玉华), and Wang Qi-Ming(王启明) |
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Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon |
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Chin. Phys. B
2012 Vol.21 (1): 17805-017805
[Abstract]
(1331)
[HTML 1 KB]
[PDF 358 KB]
(862)
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37807 |
Lu Hui-Min(路慧敏) and Chen Gen-Xiang(陈根祥) |
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Optimization of a GaN-based irregular multiple quantum well structure for a dichromatic white LED |
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Chin. Phys. B
2011 Vol.20 (3): 37807-037807
[Abstract]
(1407)
[HTML 0 KB]
[PDF 377 KB]
(723)
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28402 |
Zhang Xiao-Bin(张小宾), Wang Xiao-Liang(王晓亮), Xiao Hong-Ling(肖红领), Yang Cui-Bai(杨翠柏), Hou Qi-Feng(侯奇峰), Yin Hai-Bo(殷海波), Chen Hong(陈竑), and Wang Zhan-Guo(王占国) |
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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage |
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Chin. Phys. B
2011 Vol.20 (2): 28402-028402
[Abstract]
(1448)
[HTML 1 KB]
[PDF 596 KB]
(2593)
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